| 摘要 |
A nonvolatile ferroelectric memory device is provided to improve the data retention characteristics by forming a floating channel layer comprising a P type drain region, an N type channel region and a P type source region between a word line and a bottom word line. A plurality of memory cells(Q1~Qm) has a floating channel layer connected in series, and each switching operation of the memory cells is selectively controlled according to a voltage applied to a plurality of word lines and bit lines. A first switching device(T1) selectively connects a bit line and the memory cells according to the state of a first selection signal. A second switching device(T2) selectively connects a sensing line and the memory cells according to the state of a second selection signal. Each of the memory cells comprises an insulation layer formed on the upper part of the bottom word line, the floating channel layer comprising an N type channel region and a P type drain region and a P type source region, a dielectric layer formed on the upper part of the channel region of the floating channel layer and a word line formed on the upper part of the ferroelectric layer.
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