SEMICONDUCTOR DEVICE WITH DECOUPLING CAPACITOR AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device with a decoupling capacitor and a manufacturing method thereof are provided to secure the reliability enough from a gate insulating layer by forming the gate insulating layer on an epitaxial layer. A semiconductor layer is formed on a semiconductor substrate(10). An opening portion for exposing partially the substrate to the outside is formed on the resultant structure by removing selectively the semiconductor layer. An epitaxial layer(18) is formed on the substrate in the opening portion. A decoupling capacitor is formed on the resultant structure corresponding to the epitaxial layer. A buried insulating layer is further formed between the substrate and the semiconductor layer.