NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride semiconductor LED is provided to stably guarantee reliability of a light emitting device even in a condition of high output by greatly reducing a decrease of output efficiency even in a condition of a high current density. A light emitting structure includes p-type and n-type nitride semiconductor layers and an active layer formed between the p-type and n-type nitride semiconductor layers. P-side and n-side electrodes have a plurality of extension parts which are alternately arranged at regular intervals, respectively connected to the upper surfaces of the p-type and n-type nitride semiconductor layers. The extension part of the p-side electrode has a width of 2~50 micrometers. An interval between the extension part of the p-side electrode and the extension part of an adjacent p-side electrode is at least twice the width of the extension part of the p-side electrode.