| 摘要 |
A vapor deposition reactor is provided to acquire uniform film characteristics, to improve deposition efficiency and to reduce a pumping time by using a small sized inlet portion. A substrate penetrates into a vapor deposition reactor without contact by moving relatively the substrate and the vapor deposition reactor against each other. The vapor deposition reactor includes a small sized inlet portion and an exhaust portion. A source material and a reactant is injected into the inlet portion(41). The exhaust portion(42) is used for pumping completely the source material and the reactant under a purge gas condition. The inlet and exhaust portions have the same structure composed of a plurality of holes.
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