| 摘要 |
PROBLEM TO BE SOLVED: To simplify a manufacturing process for reflection type display devices significantly. SOLUTION: The display device is provided with a thin film transistor, and an insulating film and a pixel electrode, both arranged over the thin film transistor. The pixel electrode is electrically connected with the thin film transistor, has irregularity on its surface, and has function as a reflection electrode. The thin film transistor includes a crystalline silicon film in which a channel forming region, a low density impurity region, a source region, and a drain region are formed; and a gate electrode formed over the crystalline silicon film through an gate insulating film. The insulating film is formed by laminating layers of silicon oxide, silicon nitride and silicon oxynitride or a material selected from organic resin, and at least one of the insulating layers is a light shielding film containing at least one of material of a carbon group or pigment. COPYRIGHT: (C)2007,JPO&INPIT |
