| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method of a wafer in which a phosphoric acid layer remaining on a silicon oxide layer is removed. SOLUTION: The cleaning method of a wafer comprises a step for removing a silicon oxide layer on a wafer by 0.5 nm or more including a phosphoric acid layer using a cleaning liquid produced by mixing ammonia water, hydrogen peroxide water, and water as a removing liquid, and removing the phosphoric acid layer formed parasitically on the surface layer of the silicon oxide layer together with a part of the silicon oxide layer. Consequently, a silicon oxide layer from which the phosphoric acid layer is removed can be obtained. COPYRIGHT: (C)2007,JPO&INPIT
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