发明名称 Semiconductor memory device
摘要 A word control circuit activates word lines corresponding to a start row address and a next row address overlapping in the continuous mode. Accordingly, even in the case where the start address indicates an end memory cell connected to a word line, the switching operation of the word lines can be thus accessed in a sequential manner. That is, a controller accessing a semiconductor memory device can access the memory without data interruption. This can prevent the data transfer rate from lowering. Furthermore, it is made unnecessary to form a signal and control circuit for informing a controller of the fact that a word line is being switched so that the construction of a semiconductor memory device and a control circuit of the controller can be simplified. This results in reduction of the system cost.
申请公布号 US2006256642(A1) 申请公布日期 2006.11.16
申请号 US20060488024 申请日期 2006.07.18
申请人 FUJITSU LIMITED 发明人 IKEDA HITOSHI;FUJIOKA SHINYA;SAWAMURA TAKAHIRO
分类号 G11C8/00;G11C7/10;G11C8/08;G11C11/407;G11C11/4076;G11C11/408 主分类号 G11C8/00
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