| 摘要 |
<p>A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region (11) of a first conductivity type formed on a semiconductor substrate (10), a first insulating film (22) formed on the semiconductor substrate while covering the impurity region (11), an opening (CH) formed in the first insulating film (22) so as to reach the impurity region (11), and a first semiconductor layer (31) of a first conductivity type, a second insulating film (23), and a second semiconductor layer (32) of a second conductivity type successively stacked in the opening from the impurity region side. <IMAGE></p> |
