METHOD OF FABRICATING VERTICAL TYPE LIGHT EMITTING DEVICE

摘要

A method for fabricating a vertical light emitting device is provided to eliminate the necessity of a dry etch process for isolation by forming a plurality of buffer layers separated from each other on a substrate and by growing a light emitting structure on each buffer layer. A plurality of buffer layers are formed on a substrate wherein a plurality of protrusions are formed on each lateral surface of the plurality of buffer layers, separated from each other. Light emitting structures(220a,220b) are respectively formed on the plurality of buffer layers. Current diffusion layers(230a,230b) are respectively formed on the light emitting structures. Support units(240a,240b) are attached to interconnect all the upper parts of the current diffusion layers. The plurality of buffer layers and the substrate under the light emitting structures are removed. Electrodes layers are respectively formed under the light emitting structures. The support unit except the upper part of the current diffusion layer is removed by an etch process to isolate devices.