| 摘要 |
This specification relates to a semiconductor device that comprises a semiconductor substrate 11 , a source region 12 and a drain region 13 , which are formed on the semiconductor substrate 11 with a channel region 14 therebetween; a floating gate electrode 152 that is formed on the channel region 14 with a gate insulator film 151 therebetween; a ferroelectric film 154 that is formed on the floating gate electrode 152 ; and a control gate electrode 156 that is formed on the ferroelectric film 154 , wherein intermediate insulator films 153 and 155 are formed between at least one of the pairs consisting of the floating gate electrode 152 and the ferroelectric film 154 , and the ferroelectric film 154 and the control gate electrode 156 , and the intermediate insulator films 153 and 155 are made of hafnium oxide that contains nitrogen atoms.
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