A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device is provided to form a recessed silicon-germanium source/drain from which defects on a silicon interface are completely removed by using a selective single crystalline growth method without performing a dry etch process. A first silicon layer is formed on a semiconductor substrate(31). The first silicon layer formed on the substrate is patterned to expose a channel region. A second silicon layer is formed on the substrate to which the channel region is exposed. A silicon oxide layer is formed on the second silicon layer. The first silicon layer is removed to form a source/drain region. After a third silicon layer(36) is formed in the source/drain region, the silicon oxide layer formed on the second oxide layer is removed.