| 摘要 |
A capacitor of a semiconductor device is provided to increase the area of a lower electrode and an upper electrode by including discontinuous quantum dots. An oxide layer pattern(210a) having a trench(220) is formed on a semiconductor substrate(100). Discontinuous quantum dots(230) are formed on the inner wall of the trench. A lower electrode(240a) is formed on the inner wall and the bottom of the trench, surrounding the quantum dots. A dielectric layer(250) is formed on the lower electrode. An upper electrode(260) is formed on the dielectric layer. The quantum dots can be polysilicon quantum dots, quantum dots of a silicon nitride layer, or quantum dots of a silicon oxide layer.
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