| 摘要 |
At the time of forming an oxynitride film on a substrate by nitriding the substrate with plasma generated by microwaves after forming an oxide film, the microwaves are intermittently supplied. Ion bombardment due to electron temperature reduction is reduced by intermittently supplying the microwaves, and the diffusing speed of a nitride seed in the oxide film is reduced. As a result, nitrogen concentrates on a nitride film interface on the substrate side, and the concentration increase can be suppressed. Thus, the film quality of the oxynitride film can be improved, a leak current can be reduced, and operation speed and NBTI resistance can be improved.
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