| 摘要 |
A nano semiconductor switch device and a method of manufacturing the nano semiconductor switch device and a semiconductor memory device are provided to increase an operation speed of the semiconductor memory device by using an electro mechanism of a carbon nano tube. A nano semiconductor switch device includes a semiconductor substrate(100), a first conductive layer(110), a second conductive layer(140), a first insulation layer(120), plural CNTs(150), and a third conductive layer. The first conductive layer is formed on the semiconductor substrate. The second conductive layer is formed on the first conductive layer. The first insulation layer is formed on the semiconductor substrate and includes a contact hole, which exposes a portion of the second conductive layer. The CNT(Carbon Nano Tubes) are vertically grown from the second conductive layer to the semiconductor substrate inside the contact hole. The third conductive layer is formed on the first insulation layer and includes an air gap, which is apart from an edge of the contact hole by a predetermined distance, such that the third conductive layer is electrically separated from the CNTs.
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