| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for reducing the side etching of an Si group film, the cut quantity of a ground Si layer and mask retreat when plasma etching is applied to a high dielectric constant film (High-k). <P>SOLUTION: At least one sort of gas is used as for etching gas for etching a high dielectric constant film 42, selected from C<SB>2</SB>H<SB>2</SB>, C<SB>2</SB>H<SB>4</SB>, C<SB>2</SB>H<SB>6</SB>, C<SB>3</SB>H<SB>6</SB>, C<SB>3</SB>H<SB>8</SB>, C<SB>4</SB>H<SB>6</SB>, C<SB>4</SB>H<SB>8</SB>, C<SB>4</SB>H<SB>10</SB>, CHCl<SB>3</SB>, CHF<SB>3</SB>, CH<SB>2</SB>Cl<SB>2</SB>, CH<SB>2</SB>F<SB>2</SB>, CH<SB>2</SB>Br<SB>2</SB>, CH<SB>3</SB>Cl, CH<SB>3</SB>F, CH<SB>3</SB>Br, CH<SB>3</SB>OH, C<SB>2</SB>H<SB>5</SB>OH, C<SB>2</SB>H<SB>2</SB>Cl<SB>2</SB>, C<SB>2</SB>H<SB>5</SB>Cl, and C<SB>3</SB>H<SB>6</SB>Cl<SB>2</SB>; mixed gas obtained by mixing the selected gas with at least one sort of gas selected from Cl<SB>2</SB>, HCl, BCl<SB>3</SB>, and HBr; or mixed gas obtained by mixing the selected gas with inert gas and at least one sort of gas selected from Cl<SB>2</SB>, HCl, BCl<SB>3</SB>, and HBr. The high dielectric constant film 42 is selectively etched against an Si substrate 41, a Poly-Si film 43 and so on. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
