SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To suppress an increase in physical film thickness of an electrode-to-electrode insulating film between a floating gate electrode and a control gate electrode, and also to prevent the formation of bird's beak in the insulating film. SOLUTION: The method of manufacturing a semiconductor memory device includes steps of: forming a floating gate electrode FG above a semiconductor substrate 101; forming an electrode-to-electrode insulating film 108 above the floating gate electrode FG; forming a radical nitride film 109 on the surface of the insulating film 108 through radical nitriding; and forming a control gate electrode CG on the radical nitride film 109. COPYRIGHT: (C)2007,JPO&INPIT