| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low reflection pattern film which can greatly lower reflectivity. <P>SOLUTION: A 1st chromium oxide layer (40 nm in thickness), a first chromium layer (200 nm in thickness), a second chromium oxide layer (57 nm in thickness), a second chromium layer (10 nm in thickness) and a third chromium oxide layer (69 nm in thickness) are laminated in this order on a quartz substrate. After forming a pinhole pattern by etching, a magnesium fluoride layer (101 nm in thickness) is laminated thereon. Consequently, the low reflection pattern film having ≤0.5% surface reflectivity to 530 to 590 nm wavelength and optical density of ≥4 and having no polarization characteristic can be obtained. <P>COPYRIGHT: (C)2007,JPO&INPIT |
