发明名称 MANUFACTURING METHOD FOR MICRO-ELECTRON SOURCE DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a micro-electron source device having proper electron emission characteristics, without making bright spots generated on a display, using a simple method. <P>SOLUTION: This manufacturing method for a micro-electron source device comprises a cathode electrode forming process for forming a cathode electrode 11 on a support substrate 10, a composite layer forming process for forming a composite layer 12L, wherein a carbon material 12a is embedded in a conductive matrix 12b on the cathode electrode 11, and a micro-electron source layer forming process for exposing a part of the carbon material 12a to the surface of the composite layer 12L, by removing the matrix 12b of an upper part of the composite layer 12L for forming a micro-electron source layer 12. The micro-electron source layer forming process comprises a process for removing the matrix 12b of the upper part of the composite layer 12L, by making a resin layer La having conductivity and adhesiveness contact the composite layer 12L, then, peeling off the resin layer La. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006310124(A) 申请公布日期 2006.11.09
申请号 JP20050132131 申请日期 2005.04.28
申请人 SONY CORP 发明人 MUROYAMA MASAKAZU;SAITO ICHIRO
分类号 H01J9/02 主分类号 H01J9/02
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