| 摘要 |
PROBLEM TO BE SOLVED: To provide a door plate used in a semiconductor treatment that depends on process gases. SOLUTION: The process chamber of a vertical furnace is provided with a closure, or door, comprising an upper and a lower door plates. The upper door plate has a gas exhaust opening close to its center, thereby allowing for a symmetrical flow of process gases via the process chamber and into the gas exhaust opening. The upper door plate is spaced from the lower door plate to form a sealing chamber purged with an inert gas. Optionally, both the gas exhaust opening and the sealing chamber empty into a gas exhaust channel formed inside the upper door plate. The gas exhaust channel leads to an exhaust which exhausts gases from the furnace and separates the flow path of corrosive process gases from surfaces of the lower door plate, which may be formed of a metal that is relatively easily-corroded. COPYRIGHT: (C)2007,JPO&INPIT
|
