METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device is provided. Before covering the isolation structures with a conductive layer, a material layer is formed on the isolation structures. The fluid-like material layer allows the material layer formed between the isolation structures to be thicker than that formed on the top of the isolation structures. The isolation structures are then effectively etched back. The material layer at the top of the isolation structures is removed and a portion of isolation structures is also removed to lower the height of the isolation structures.