Methods of forming programmable memory devices

摘要

The invention includes a method of forming a programmable memory device. A tunnel oxide is formed to be supported by a semiconductor substrate. A stack is formed over the tunnel oxide. The stack comprises a floating gate, dielectric mass and control gate. The stack has a top, and has opposing sidewalls extending downwardly from the top. The dielectric mass includes silicon nitride. Silicon nitride spacers are formed along sidewalls of the stack, and a silicon nitride cap is formed over a top of the stack. The silicon nitride within the dielectric mass, cap and/or sidewall spacers is formed from trichlorosilane and ammonia.