发明名称 MoSi2-Si3N4 composite coating and manufacturing method thereof
摘要 A MoSi<SUB>2</SUB>-Si<SUB>3</SUB>N<SUB>4 </SUB>composite coating which is coated on a surface of base materials which are molybden, molybden alloy, molybden-coated niobium or molybden-coated niobium alloy and a manufacturing method thereof. The MoSi<SUB>2</SUB>-Si<SUB>3</SUB>N<SUB>4 </SUB>composite coating on the surface of the base material can be formed by forming a Mo<SUB>2</SUB>N diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi<SUB>2</SUB>-Si<SUB>3</SUB>N<SUB>4 </SUB>composite coating by vapor-depositing of silicon on the surface of the Mo<SUB>2</SUB>N diffusion layer, or the MoSi<SUB>2</SUB>-Si<SUB>3</SUB>N<SUB>4 </SUB>composite coating on the surface of the base material can be formed by forming a MoSi<SUB>2 </SUB>diffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSi<SUB>2 </SUB>diffusion layer into a Mo<SUB>5</SUB>Si<SUB>3 </SUB>diffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a Mo<SUB>2</SUB>N-Si<SUB>3</SUB>N<SUB>4 </SUB>composite diffusion layer by vapor-depositing of nitrogen on the surface of the Mo<SUB>5</SUB>Si<SUB>3 </SUB>diffusion layer by the CVD method and forming a MoSi<SUB>2</SUB>-Si<SUB>3</SUB>N<SUB>4 </SUB>composite coating by vapor-depositing of silicon on the surface of the Mo<SUB>2</SUB>N-Si<SUB>3</SUB>N<SUB>4 </SUB>composite diffusion layer. The MoSi<SUB>2</SUB>-Si<SUB>3</SUB>N<SUB>4 </SUB>composite coating manufactured by the above method is characterized as a structure in which Si<SUB>3</SUB>N<SUB>4 </SUB>particles are distributed in a MoSi<SUB>2 </SUB>grain boundary of equiaxed grains, thus to improve cyclic oxidation resistance of the base material, improve low-temperature oxidation resistance, and improve mechanical properties of the coating. Therefore, transmission of fine cracks by the thermal stress can be restrained.
申请公布号 US2006251912(A1) 申请公布日期 2006.11.09
申请号 US20060482840 申请日期 2006.07.10
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 KIM JAE S.;KIM KYEUNG H.;BYUN JI Y.;YOON JIN K.;KIM DOO Y.;LEE JONG K.;SHIN JONG C.;RHO DAE H.
分类号 C23C8/34;C23C16/00;B32B15/04;C23C8/02;C23C10/02;C23C10/44;C23C12/00;C23C14/06;C23C16/42 主分类号 C23C8/34
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