| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device improved in reliability of data. <P>SOLUTION: The semiconductor storage device comprises an active area partitioned by an element separation insulating film in a semiconductor layer formed on an insulating substrate, and a NAND cell unit to which a plurality of electrically rewritable nonvolatile memory cells formed in the active area is connected in series, and of which both ends are connected to a bit line and a source line, respectively, and includes a carrier ejecting mode for ejecting the carrier in the NAND cell unit to at least one of the bit line and the source line. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
