| 摘要 |
PROBLEM TO BE SOLVED: To extract physical parameters of a semiconductor device accurately and quickly. SOLUTION: The capacitance-voltage characteristics of a MIS-type field-effect transistor are measured. From the measurement results, a restrictive condition existing between the area density of faulty charges existing inside a gate insulating film and in the interface of the insulating film and solid ion volume density within a gate electrode is obtained. For a combination of the faulty charge areal density and the solid ion volume density satisfying the restrictive condition, using a physical model, physical quantities corresponding to a gate electrode surface capacitance and a substrate surface capacitance are calculated. On the basis of the measurement results of the capacitance-voltage characteristics, a physical quantity corresponding to the sum of the gate electrode surface capacitance and the substrate surface capacitance is calculated. A combination of the area density of faulty charges and the volume density fixed ions is determined which minimizes an evaluation function concerning an error between the sum of the gate electrode surface capacitance calculated using the physical model and the physical quantity corresponding to the substrate surface capacitance and the physical quantity corresponding to the sum of the gate electrode surface capacitance calculated on the basis of the measurement results of the capacitance-voltage characteristics and the substrate surface capacitance. COPYRIGHT: (C)2007,JPO&INPIT
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