发明名称 |
Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof |
摘要 |
A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not required to be so. The barrier layer may be sputtered from a target of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer may be formed of an alloy of copper and ruthenium in contact to a barrier layer over the dielectric.
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申请公布号 |
US2006251872(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20050124611 |
申请日期 |
2005.05.05 |
申请人 |
WANG JENN Y;WANG WEI D;WANG RONJUN;TANAKA YOICHIRO;CHUNG HUA;ZHANG HONG;YU JICK;GOPALRAJA PRABURAM;FU JIANMING |
发明人 |
WANG JENN Y.;WANG WEI D.;WANG RONJUN;TANAKA YOICHIRO;CHUNG HUA;ZHANG HONG;YU JICK;GOPALRAJA PRABURAM;FU JIANMING |
分类号 |
B32B3/00 |
主分类号 |
B32B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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