| 摘要 |
PROBLEM TO BE SOLVED: To control deterioration of the electrical characteristics of an electrode layer. SOLUTION: Since a semiconductor apparatus forms a silicon nitride film 10 formed in a gate electrode forming region GC, WSi film 9, a third polycrystalline silicon layer 8, ONO film 7, and a protective film 14 to protect a sidewall of a second polycrystalline silicon layer 6; each layer 6 to 10 of these is protected, and the deterioration of functions of each layer 6 to 10 at etching-processing a first polycrystalline silicon layer 5 is restrained, when the first polycrystalline silicon layer 5 is eliminated in a gate electrode separating region GV. COPYRIGHT: (C)2007,JPO&INPIT
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