| 摘要 |
A semiconductor transistor which is not capable of storing data is formed as follows. An insulating layer is formed over a silicon region. An undoped polysilicon layer is formed over and in contact with the insulating layer. A doped polysilicon layer is formed over and in contact with the undoped polysilicon layer such that at least two edges of the doped polysilicon layer vertically line up with corresponding edges of the undoped polysilicon layer to thereby form sidewalls, and the doped and undoped polysilicon layers form a gate of the transistor. After the doped polysilicon layer is formed, source and drain regions are formed in the silicon region. Dopants from the doped polysilicon layer migrate into the undoped polysilicon layer thereby doping the undoped polysilicon layer.
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