发明名称 MANUFACTURING METHOD OF OXIDE SEMICONDUCTOR ELECTRODE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing, with a good yield, an oxide semiconductor electrode capable of improving energy conversion efficiency when used for a dye-sensitized solar cell. <P>SOLUTION: This method forms a layered product for an oxide semiconductor electrode by executing: a process for forming a pattern 2 for forming an interlaid part containing organic matter and metal oxide semiconductor fine particles on a heat-resistant substrate 1; a process for forming, on the heat-resistant substrate and the interlaid part forming pattern, an oxide semiconductor layer forming layer 3 where the concentration in a solid component of the metal oxide semiconductor fine particles is higher than that of an interlaid part forming application liquid; a baking process for forming an interlaid part 2' and an oxide semiconductor layer 3'; a first electrode layer formation process for forming a first electrode layer 4 on the oxide semiconductor layer; forms the oxide semiconductor electrode with the heat-resistant substrate by executing a base material formation process for forming a base material on the first electrode layer; and executes a separation process for separating the heat-resistant substrate from the oxide semiconductor electrode with the heat-resistant substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006310255(A) 申请公布日期 2006.11.09
申请号 JP20050285323 申请日期 2005.09.29
申请人 DAINIPPON PRINTING CO LTD 发明人 YABUUCHI YASUSUKE;NAKAGAWA HIROKI;KOBORI HIROYUKI
分类号 H01M14/00;H01L31/04 主分类号 H01M14/00
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