| 摘要 |
PROBLEM TO BE SOLVED: To prevent the contamination of a target caused by a gaseous starting material or reaction gas to be introduced at the time of performing an ALD process in the case that a film deposition system is composed so that film deposition by the ALD process and film deposition by a sputtering process can be performed to a substrate to be treated on a substrate stage in the same chamber. SOLUTION: A vacuum chamber is partitioned symmetrically into a sputtering chamber 11a capable of performing a sputtering process and a chemical film deposition chamber 11b capable of performing a chemical film deposition process, and a substrate transport means 3 for freely transporting a substrate S to be treated is positioned between respective film deposition positions in the sputtering chamber 11a and the chemical film deposition chamber 11b. In this case, the ratio of the distance between the substrate S and the inner wall opposing to the substrate S in the chemical film deposition chamber 11b, to the distance between the substrate S and the target arranged opposed to the substrate S in the sputtering chamber 11a, is set to be within a range of 0.07 to 0.3. COPYRIGHT: (C)2007,JPO&INPIT
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