发明名称 DIELECTRIC LAYER OF NANO-COMPOSITE, CAPACITOR HAVING THE SAME, AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide the dielectric layer of a nano-composite which is excellent in a leak current characteristic so as to be adopted in different capacitors including a concave structure, and to obtain a high dielectric constant; and to provide the capacitors having the dielectric body, and its manufacturing method. <P>SOLUTION: The dielectric layer for the capacitor includes the dielectric layer of the nano-composite which is obtained by mixing HfO<SB>2</SB>with the dielectric layer (the dielectric constant to be selected from ZrO<SB>2</SB>, La<SB>2</SB>O<SB>3</SB>, and Ta<SB>2</SB>O<SB>5</SB>is 25-30, and band gap energy is 4.3-7.8), which has a relative permittivity at least the same as that of HfO<SB>2</SB>in the form of the nano-composite. Consequently, an effect is obtained to manufacture the capacitor having the high dielectric constant, while securing the leak current characteristic without the loss of the dielectric constant regardless of a relatively thin thickness. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006310754(A) 申请公布日期 2006.11.09
申请号 JP20060000062 申请日期 2006.01.04
申请人 HYNIX SEMICONDUCTOR INC 发明人 KIL DEOK-SIN;KO KEN
分类号 H01L27/108;C23C16/40;C23C16/455;H01L21/316;H01L21/8242 主分类号 H01L27/108
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