发明名称 |
Process for forming a dielectric on a copper-containing metallization and capacitor arrangement |
摘要 |
Process for forming a dielectric. The process may include forming the dielectric on a metallization and capacitor arrangement. The process allows the direct application of a dielectric layer to a copper-containing metallization. Accordingly, two process gases may be excited with different plasma powers per unit substrate area, or one process gas may be excited with a plasma and another process gas may not be excited.
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申请公布号 |
US2006252240(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20060414414 |
申请日期 |
2006.04.28 |
申请人 |
GSCHWANDTNER ALEXANDER;HOLZ JUERGEN;SCHRENK MICHAEL |
发明人 |
GSCHWANDTNER ALEXANDER;HOLZ JUERGEN;SCHRENK MICHAEL |
分类号 |
H01L21/20;C23C14/06;C23C16/34;C23C16/44;C23C16/455;C23C16/511;H01L21/02;H01L21/318;H01L21/768;H01L23/522 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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