| 发明名称 |
ATOMIC LAYER DEPOSITED NANOLAMINATES OF HfO2/ZrO2 FILMS AS GATE DIELECTRICS |
| 摘要 |
A dielectric film containing a nanolaminate with a hafnium oxide layer and a zirconium oxide layer and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using silicon oxide.
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| 申请公布号 |
US2006252211(A1) |
申请公布日期 |
2006.11.09 |
| 申请号 |
US20060457978 |
申请日期 |
2006.07.17 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
| 分类号 |
H01L21/336;C23C16/40;C23C16/44;C23C16/455;H01L21/28;H01L21/316;H01L29/51 |
主分类号 |
H01L21/336 |
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