| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solvent for removing a protection film to remove a resist protection film forming material suitably used in a liquid immersion exposure process and to form a high resolution resist pattern by a liquid immersion exposure by using the solvent in a liquid immersion exposure process, in particular, a liquid immersion exposure process of exposing a resist film to lithographic exposure light while a liquid of a predetermined thickness having a refractive index higher than that of air and lower than that of the resist film is present on at least the resist film in the path of the lithographic exposure light reaching the resist film, so as to improve the resolution of a resist pattern, and to form a resist pattern with high resolution by liquid immersion exposure. <P>SOLUTION: The solvent for removing a protective film is used to remove a resist protection film forming material suitably used in a liquid immersion exposure process, and the solvent contains a fluorine-based solvent. The protection film is removed by using the above solvent for removing a resist protection film for a liquid immersion process-use. <P>COPYRIGHT: (C)2007,JPO&INPIT |
