发明名称 METHOD FOR FORMING METALLIC FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a metallic film by which a high adhesion between a substrate and a metallic film can be kept even if the same conveying plate is repeatedly used in the case of performing a plasma treatment and a film deposition treatment by a physical vapor deposition process in a state that the substrate is arranged on a conveying plate, and then depositing the metallic film on the surface of the substrate. SOLUTION: The method for forming a metallic film comprises: a stage where a conveying plate 2 holding a substrate 1 is arranged on a holding electrode 3 for plasma treatment, and voltage is applied to the space between the holding electrode 3 and a counter electrode 4, thus plasma treatment is performed to the surface of the substrate; and a stage where, in a state where the substrate 1 is held to the conveying plate 2, the metallic film 7 is formed on the substrate 1 by a physical vapor deposition process. The conveying plate 2 is composed of: a conductor part 8 having electric conductivity in which one side is contacted with the holding electrode 3 and the other side is contacted with the substrate 1 in the plasma treatment stage; and an insulator part 9 having electric insulation properties which surrounds the conductor part 8. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006307309(A) 申请公布日期 2006.11.09
申请号 JP20050134392 申请日期 2005.05.02
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 KINOSHITA NAOTERU;MASAKI YASUSHI
分类号 C23C14/50;H05K3/14 主分类号 C23C14/50
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