| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film transistor adapted to simplify the step. SOLUTION: A manufacturing method of a thin film transistor comprises the steps of forming at least one buffer layer on a substrate, forming a first semiconductor layer on the buffer layer, forming a doped second semiconductor layer on the first semiconductor layer, forming a source electrode and a drain electrodes by patterning the second semiconductor layer, forming a gate insulating film on the source electrode and the drain electrode, and forming the gate electrode on the gate insulating film. COPYRIGHT: (C)2007,JPO&INPIT
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