| 摘要 |
After forming an interlayer insulating film ( 14 ) covering a ferroelectric capacitor, a hydrogen diffusion preventing film ( 18 ), an etching stopper ( 19 ) and an interlayer insulating film ( 20 ) are formed. Then, a wiring having a tantalum nitride (TaN) film ( 21 ) (barrier metal film) and a copper (Cu) film ( 22 ) is formed in the interlayer insulating film ( 20 ) by a single damascene method. Thereafter, a wiring having a copper film ( 29 ) and a wiring having a copper film ( 36 ) and the like are formed by a dual damascene method.
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