| 摘要 |
A non-volatile storage element 100 has a silicon substrate 102 , a first memory region 106 a composed of a first lower silicon oxide film 108 a, a first silicon nitride film 110 a, and a first upper layer silicon oxide film 112 a provided in this order, a second memory region 106 b composed of a second lower layer silicon oxide film 108 b, a second silicon nitride film 110 b, and a second upper layer silicon oxide film 112 b provided in this order, and a first control gate 114 and a second control gate 116 arranged on the first memory region 106 a and the second control gate 116 , respectively, on the silicon substrate 102 . The silicon nitride film 110 is provided so as to be horizontal in a direction within a substrate plane.
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