ONE-TRANSISTOR FLOATING-BODY DRAM DEVICES HAVING VERTICAL CHANNEL TRANSISTOR STRUCTURE AND METHODS OF FABRICATING THE SAME

摘要

Single transistor floating body DRAM devices having a vertical channel transistor structure and manufacturing methods thereof are provided to increase integration by using a gate electrode vertically arranged between floating bodies. A pair of first and second floating bodies(25,35) are located on a semiconductor substrate(10) to be separated from each other. A source region(37) and drain regions(27,28) are located in a lower portion of an upper portion of the first and the second floating bodies. A gate electrode is arranged between the first and the second floating bodies. The gate electrode includes first and second gate electrodes(40a,40b). The first gate electrode covers a sidewall of the first floating body. The second gate electrode covers a sidewall of the second floating body. A bit line(51) is arranged on the first and the second floating bodies and electrically connected to the drain regions.