发明名称 Intermeshed guard bands for multiple voltage supply structures on an integrated circuit, and methods of making same
摘要 The present invention is generally directed to intermeshed guard bands for multiple voltage supply regions or structures on an integrated circuit, and methods of making same. In one illustrative embodiment, an integrated circuit is provided that comprises a plurality of voltage supply structures formed above a substrate, the plurality of voltage supply structures being at differing voltage levels, and a guard band comprised of at least one doped region formed in the substrate under each of the plurality of voltage supply regions, each of the guard bands being comprised of a plurality of fingers extending from each end of the guard bands.
申请公布号 US7132696(B2) 申请公布日期 2006.11.07
申请号 US20020231766 申请日期 2002.08.28
申请人 MICRON TECHNOLOGY, INC. 发明人 WARD JOSEPH A.
分类号 H01L31/111;H01L21/761;H01L21/8238;H01L23/528 主分类号 H01L31/111
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