| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent previously cone-type defects by removing particles generated by reacting between a photoresist and an anti-reflective coating layer using a reverse mask pattern. A conductive layer is formed on a semiconductor substrate(21) having a lower structure. An anti-reflective coating layer is formed on the conductive layer. The anti-reflective coating layer and the conductive layer are etched to form a conductive pattern(22a) by using a positive photoresist pattern, thereby generating conductive residues(B). The conductive residues are removed by peel-off using a negative photoresist pattern(25) as a mask.</p> |
