| 摘要 |
A trench isolation layer of a semiconductor device and a forming method thereof are provided to improve refresh characteristics by reducing the size of source/drain forming regions using a spherical isolation trench structure. A semiconductor substrate(200) comprises an isolation region and an active region defined by the isolation region. A trench isolation layer(215) is formed in the substrate within the isolation region. The trench isolation layer is formed like a spherical type structure. The trench isolation layer is made of SOG(Spin On Glass). The trench isolation layer is formed by filling the SOG in a spherical type trench. The spherical type trench is formed in the substrate by using an isotropic etching process.
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