| 摘要 |
PROBLEM TO BE SOLVED: To reduce a contact resistance of a contact hole that electrically contacts to a semiconductor substrate. SOLUTION: An element forming region 5 is partitioned on a silicon substrate 1 by an STI 2. The STI 2 protrudes from the surface of the silicon substrate 1. A silicon nitride film 7 and an interlayer insulating film 8 are laminated on the upper surface of it. A contact hole 9 is formed between the STIs 2, 2. The contact hole 9 has a hole upper part 9a of the film 8 and a hole lower part 9c of the substrate 1. The hole lower part 9c is formed in a shape laterally spreading by conducting the CDE method tooling after the RIE method tooling, and its contact area with the silicon substrate 1 is increased more than that tooled by the RIE method. COPYRIGHT: (C)2007,JPO&INPIT
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