| 摘要 |
A level shift for reducing a leakage current and a block driver of a nonvolatile semiconductor memory device including the same are provided to reduce the total current consumption by reducing the leakage current by increasing a threshold voltage of a control PMOS transistor. In a level shift(100), an enable part(110) enables an output signal in response to an input signal. A disable part(120) disables the output signal, in response to the input signal. In the enable part, a shifting voltage stage(Nsh) receives the boosting voltage. A shifting unit(111) is driven to provide a voltage level with a smaller voltage difference between with the boosting voltage than the voltage of the output signal to a control node(Nc), in order to enable the output signal with the boosting voltage, and is formed between the shifting voltage stage and the control node and controlled by the output signal. A control PMOS transistor(113) is formed between the control node and the output signal, and gated in response to the input signal. A bulk voltage generation unit(115) generates a bulk voltage with the bulk of the control PMOS transistor, and the bulk voltage has a smaller voltage difference between with the boosting voltage than the control node.
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