发明名称 |
Method of patterning a low-k dielectric using a hard mask |
摘要 |
By using a non-metallic hard mask for patterning low-k dielectric materials of advanced semiconductor devices, an enhanced degree of etch fidelity is obtained. The present invention may readily be applied to via first-trench last, trench first-via last schemes.
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申请公布号 |
US2006246711(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
US20050287632 |
申请日期 |
2005.11.28 |
申请人 |
LEHR MATTHIAS;HUEBLER PETER;ZISTL CHRISTIAN |
发明人 |
LEHR MATTHIAS;HUEBLER PETER;ZISTL CHRISTIAN |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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