| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide optical semiconductor elements in which elements are miniaturized and operations are speeded up, and an optical modulator. <P>SOLUTION: The optical semiconductor element 30 constituting a waveguide of light is formed as a MOS capacitor structure section 42 consisting of an (n) type semiconductor layer 32, an insulator layer 36 and an a (p) type semiconductor layer 34, and a voltage is applied to the (n) type semiconductor layer 32 and the (p) type semiconductor layer 34 by a charge accumulation layer formed near the insulator layer 36 in such a manner that plasma reflection of light is generated, and thereby, the light is intensity modulated. At this point, the length in the propagation direction of the light of the MOS capacitor structure section 42 suffices with the length at which the light input to the (n) type second layer 32 is coupled to the (n) type semiconductor layer 32 and the (p) type semiconductor layer 34 at the terminal of the MOS capacitor structure section 42 and therefore, the length of the element can be made shorter than the length of the optical semiconductor element utilizing the interference by a phase difference of the light. Consequently, the miniaturization and speeding up of the optical modulator are made possible. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
