SEMICONDUCTOR SUBSTRATE CLEANING

摘要

Methods for removing titanium-containing layers from a substrate surface where those titanium-containing layers are formed by chemical vapor deposition (CVD) techniques. Titanium-containing layers, such as titanium or titanium nitride, formed by CVD are removed from a substrate surface using a sulfuric acid (H₂SO₄) solution. The H₂SO₄ solution permits selective and uniform removal of the titanium-containing layers without detrimentally removing surrounding materials, such as silicon oxides and tungsten. Where the titanium-containing layers are applied to the sidewalls of a hole in the substrate surface and a plug material such as tungsten is used to fill the hole, subsequent spiking of the H₂SO₄ solution with hydrogen peroxide (H₂O₂) may be used to recess the titanium-containing layers and the plug material below the substrate surface.