| 摘要 |
PROBLEM TO BE SOLVED: To suppress degradation in characteristics and yield. SOLUTION: The manufacturing method includes a process in which a groove 1a is formed on an n-type GaN substrate 1 by selectively removing, to a specified depth, a specified region other than the region 1b of the n-type GaN substrate 1 corresponding to the light emitter of a nitride semiconductor element layer 10 formed on the n-type GaN substrate 1; and a process where the nitride semiconductor element layer 10 containing an AlGaN layer 3 is formed in the region 1b and groove 1a of the n-type GaN substrate 1. COPYRIGHT: (C)2007,JPO&INPIT
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