SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING IT

摘要

PROBLEM TO BE SOLVED: To form an organic transistor having a semiconductor of high crystallinity without a loss of planarity of the interface of a channel organic semiconductor in which carriers propagate and a gate insulating layer, and without reducing the yield. SOLUTION: The semiconductor device consists of an organic semiconductor layer which has a laminated structure, wherein at least the upper organic semiconductor layer has polycrystallinity or single crystallinity and the lower organic semiconductor layer is composed of a material which functions as a channel. By the high crystallinity of the upper organic semiconductor layer, the carrier movility can be raised to enable the compensation of the inadequate contact originated in the upper organic semiconductor layer by the lower organic semiconductor layer. COPYRIGHT: (C)2007,JPO&INPIT