| 摘要 |
An image sensor is provided to avoid dark current in a turn-off operation and smoothly transfer accumulated charges to a charge detecting part in a turn-on operation by making a charge transfer part include an indium-doped impurity region formed under a gate electrode. A photoelectric conversion part(110) is formed in a semiconductor substrate. A charge detecting part(120) is formed in the semiconductor substrate. A charge transfer part(130) includes an indium-doped impurity region(132) and a transfer gate electrode formed on the impurity region and transfers the charges accumulated in the photoelectric conversion part to the charge detecting part, formed in the semiconductor substrate between the photoelectric conversion part and the charge detecting part. The photoelectric conversion part accumulates charges according to incident light, including an N-type photodiode partially overlapping the transfer gate electrode.
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