| 摘要 |
A semiconductor device having a recess gate is provided to remarkably increase a channel length as compared with a general recess gate structure by making a recess have several grooves wherein a recess gate is buried in the recess. An isolation layer is formed in a predetermined region of a semiconductor substrate(31). A recess gate formation region in an active region defined by the isolation layer is etched by a predetermined depth to form a recess(39) with several grooves(39a,39b). A gate insulation layer is formed on the resultant structure. A recess gate(41) is formed on the gate insulation layer wherein the lower part of the recess gate is buried in the recess and the upper part of the recess gate protrudes from the surface of the semiconductor substrate. The recess gate is formed by the following steps. A conductive layer is deposited on the gate insulation layer until each groove of the recess is filled. The conductive layer is planarized. The conductive layer is selectively patterned.
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